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| Preliminary Data Sheet 2.1 FMS2003QFN-1 High Power Reflective GaAs SP4T Switch Features: 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30dB at 0.9GHz Low Insertion loss: 0.5dB at 0.9GHz Low control current Functional Schematic ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss Return Loss (TAMBIENT = 25C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50) Test Conditions 0.5 - 1.0 GHz 1.0 - 2.0 GHz 0.5 - 2.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 10% to 90% RF 90% to 10% RF 0.5 - 1.0 GHz 1.0 - 2.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz -25dBm Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz -25dBm +35dBm RF input @1GHz Min Typ <0.62 <0.65 20 >30 >26 -69 -67 -69 -70 <0.15 <0.06 38 38 >65 >62 >110 Max Units dB dB dB dB dB dBc dBc dBc dBc s s dBm Isolation 2nd Harmonic Level 3rd Harmonic Level Switching speed : Trise, Tfall P0.1dB IP3 dBm Cross modulation dBm A Control Current <10 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temp Storage Temp Symbol Pin V ctrl T oper T stor Absolute Maximum +38dBm +5V -40C to +100C -55C to +150C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: Switch State (A) V1 V2 V3 V4 ANT TO RF1 Insertion Loss Isolation ANT TO RF2 Isolation Insertion Loss Isolation ANT TO RF1 Isolation ANT TO RF2 Isolation HIGH LOW LOW LOW (B) LOW HIGH LOW LOW Isolation Insertion Loss Isolation Isolation (C) LOW LOW HIGH LOW Isolation Isolation Insertion Loss (D) LOW LOW LOW HIGH Isolation Isolation General Test Conditions: Bias Voltages Port Impedances Off arm termination LOW = 0V to 0.2V HIGH +2.5V to +5V 50 50 Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions VCTRL = 2.5V (high) & 0V (low), TAMBIENT = 25C unless otherwise stated) 0 -0.1 -0.2 -0.3 -0.4 dB -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5 FMS2003QFN DE EMBEDDED INSERTION LOSS 1 1.5 2 2.5 Frequency (GHz) 3 3.5 -15 FMS2003QFN ISOLATION -20 Key To Measurements -25 -30 --0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 dB Measurement ay -40C -35 Measurement ay 85C -40 -- Measurement ay 25C -10 FMS2003QFN RETURN LOSS -15 dB -20 -25 -30 0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Pad Layout: V1 ANT V2 Pin Number 1 Description RF1 GND RF3 V3 N/C V4 RF4 GND RF2 V2 ANT RF V1 GND Pin 1 RF1 2 RF3 3 12 11 10 9 RF2 2 3 4 PADDLE 8 7 RF4 5 6 7 8 9 10 11 4 5 6 V3 V4 12 PADDLE *View from the top of the package QFN 12 Lead 3*3 Package Outline: NiPdAu finish for Military and High reliability applications 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Evaluation Board: BOM Label C6 C1 C5 C7 C2 C10, C11, C12, C13 C1,C2, C3,C4,C5 C6, C7, C8, C9 Component Capacitor, 470pF, 0603 Capacitor, 100pF, 0402 Capacitor, 47pF, 0402 C3 C10 C8 C9 C4 Preferred evaluation board material is 0.25 mm thick BOARD ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance. C11 C12 C13 Evaluation Board De-Embedding Data (Measured): 0 -0.1 -0.2 -0.3 -0.4 dB FMS2003QFN CALIBRATION BOARD INSERTION LOSS -15 FMS2003QFN CALIBRATION BOARD RETURN LOSS -20 -25 dB -30 -35 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -40 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: sales@filcsi.com Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Ordering Information: Part Number FMS2003-005 FMS2003-005-EB Description Packaged Die Packaged die mounted on evaluation board Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A as defined in Jedec Standard No.22-A114 (0-500V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Preferred Assembly Instructions: Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices) Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: sales@filcsi.com Website: www.filtronic.com |
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